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1

Strain in Si doped GaN and the Fermi level effect

Xie, Jinqiao, Mita, Seiji, Rice, Anthony, Tweedie, James, Hussey, Lindsay, Collazo, Ramón, Sitar, Zlatko

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 1.16 MB

english, 2011

2

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - Fermi level effect on strain of Si-doped GaN

Xie, Jinqiao, Chyi, Jen-Inn, Nanishi, Yasushi, Mita, Seiji, Collazo, Ramón, Morkoç, Hadis, Piprek, Joachim, Rice, Anthony, Tweedie, James, Yoon, Euijoon, Sitar, Zlatko

Year:

2011

Language:

english

File:

PDF, 1.38 MB

english, 2011

3

Thin-film GaN Schottky diodes formed by epitaxial lift-off

Wang, Jingshan, Youtsey, Chris, McCarthy, Robert, Reddy, Rekha, Allen, Noah, Guido, Louis, Xie, Jinqiao, Beam, Edward, Fay, Patrick

Journal:

Applied Physics Letters

Year:

2017

Language:

english

File:

PDF, 1.64 MB

english, 2017

4

Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity

Ramón Collazo, Seiji Mita, Jinqiao Xie, Anthony Rice, James Tweedie, Rafael Dalmau, Zlatko Sitar

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 246 KB

english, 2010

5

Characterization of dislocation arrays in AlN single crystals grown by PVT

Rafael Dalmau, Baxter Moody, Jinqiao Xie, Ramón Collazo, Zlatko Sitar

Journal:

physica status solidi (a)

Year:

2011

Language:

english

File:

PDF, 178 KB

english, 2011

6

Sharp bound and free exciton lines from homoepitaxial AlN

Martin Feneberg, Benjamin Neuschl, Klaus Thonke, Ramón Collazo, Anthony Rice, Zlatko Sitar, Rafael Dalmau, Jinqiao Xie, Seiji Mita, Rüdiger Goldhahn

Journal:

physica status solidi (a)

Year:

2011

Language:

english

File:

PDF, 177 KB

english, 2011

7

Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN

Benjamin Neuschl, Klaus Thonke, Martin Feneberg, Seiji Mita, Jinqiao Xie, Rafael Dalmau, Ramón Collazo, Zlatko Sitar

Journal:

physica status solidi (b)

Year:

2012

Language:

english

File:

PDF, 415 KB

english, 2012

8

Ni/Au Schottky diodes on AlxGa1-xN (0.7

Jinqiao Xie, Seiji Mia, Rafael Dalmau, Ramón Collazo, Anthony Rice, James Tweedie, Zlatko Sitar

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 263 KB

english, 2011

9

Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

Ramón Collazo, Seiji Mita, Jinqiao Xie, Anthony Rice, James Tweedie, Rafael Dalmau, Zlatko Sitar

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 250 KB

english, 2011

10

Impact of gallium supersaturation on the growth of N-polar GaN

Seiji Mita, Ramón Collazo, Anthony Rice, James Tweedie, Jinqiao Xie, Rafael Dalmau, Zlatko Sitar

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 297 KB

english, 2011

11

Near-infrared wavelength intersubband transitions in GaN/AlN short period superlattices

DeCuir, E. A., Fred, Emil, Passmore, B. S., Muddasani, A., Manasreh, M. O., Xie, Jinqiao, Morkoc, Hadis, Ware, M. E., Salamo, G. J.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 517 KB

english, 2006

12

Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates

James Tweedie, Ramón Collazo, Anthony Rice, Seiji Mita, Jinqiao Xie, Rajiv-Christer Akouala, Zlatko Sitar

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 302 KB

english, 2012

13

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

Xie, Jinqiao, Ni, Xianfeng, Fan, Qian, Shimada, Ryoko, Ozgur, Umit, Morkoc, Hadis

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 413 KB

english, 2008

14

High electron mobility in nearly lattice-matched AlInN/AlN/GaN heterostructure field effect transistors

Xie, Jinqiao, Ni, Xianfeng, Wu, Mo, Leach, Jacob H., Ozgur, Umit, Morkoc, Hadis

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 679 KB

english, 2007

15

[ACM Press the 20th ACM international conference - Nara, Japan (2012.10.29-2012.11.02)] Proceedings of the 20th ACM international conference on Multimedia - MM '12 - Real-time multiple object instances detection

Xie, Chengli, Wang, Jinqiao, Zhang, Yifan, Lu, Hanqing

Year:

2012

Language:

english

File:

PDF, 1.06 MB

english, 2012

16

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

Xie, Jinqiao, Mita, Seiji, Bryan, Zachary, Guo, Wei, Hussey, Lindsay, Moody, Baxter, Schlesser, Raoul, Kirste, Ronny, Gerhold, Michael, Collazo, Ramón, Sitar, Zlatko

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.64 MB

english, 2013

17

On the strain in n-type GaN

Xie, Jinqiao, Mita, Seiji, Hussey, Lindsay, Rice, Anthony, Tweedie, James, LeBeau, James, Collazo, RamoÌn, Sitar, Zlatko

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 1.07 MB

english, 2011

18

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

Guo, Wei, Bryan, Zachary, Xie, Jinqiao, Kirste, Ronny, Mita, Seiji, Bryan, Isaac, Hussey, Lindsay, Bobea, Milena, Haidet, Brian, Gerhold, Michael, Collazo, Ramón, Sitar, Zlatko

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.40 MB

english, 2014

19

Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

Nagashima, Toru, Kubota, Yuki, Kinoshita, Toru, Kumagai, Yoshinao, Xie, Jinqiao, Collazo, Ramón, Murakami, Hisashi, Okamoto, Hiroshi, Koukitu, Akinori, Sitar, Zlatko

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 1.53 MB

english, 2012

20

Defect reduction in GaN epilayers grown by metal-organic chemical vapor deposition with in situ SiN[sub x] nanonetwork

Xie, Jinqiao, Chevtchenko, Serguei A., Özgür, Ümit, Morkoç, Hadis

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 459 KB

english, 2007

21

Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

Kumagai, Yoshinao, Kubota, Yuki, Nagashima, Toru, Kinoshita, Toru, Dalmau, Rafael, Schlesser, Raoul, Moody, Baxter, Xie, Jinqiao, Murakami, Hisashi, Koukitu, Akinori, Sitar, Zlatko

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 1.02 MB

english, 2012

22

[IEEE 2014 IEEE International Conference on Multimedia and Expo Workshops (ICMEW) - Chengdu, China (2014.7.14-2014.7.18)] 2014 IEEE International Conference on Multimedia and Expo Workshops (ICMEW) - A coarse-to-fine logo recognition method in video streams

Chaoyang Zhao,, Wang, Jinqiao, Xie, Chengli, Lu, Hanqing

Year:

2014

Language:

english

File:

PDF, 732 KB

english, 2014

23

X-ray characterization of composition and relaxation of Al[sub x]Ga[sub 1−x]N(0≤x≤1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy

Tweedie, James, Collazo, Ramon, Rice, Anthony, Xie, Jinqiao, Mita, Seiji, Dalmau, Rafael, Sitar, Zlatko

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 1.94 MB

english, 2010

24

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Gaddy, Benjamin E., Bryan, Zachary, Bryan, Isaac, Kirste, Ronny, Xie, Jinqiao, Dalmau, Rafael, Moody, Baxter, Kumagai, Yoshinao, Nagashima, Toru, Kubota, Yuki, Kinoshita, Toru, Koukitu, Akinori, Sitar

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 932 KB

english, 2013

25

Polarity control and growth of lateral polarity structures in AlN

Kirste, Ronny, Mita, Seiji, Hussey, Lindsay, Hoffmann, Marc P., Guo, Wei, Bryan, Isaac, Bryan, Zachary, Tweedie, James, Xie, Jinqiao, Gerhold, Michael, Collazo, Ramón, Sitar, Zlatko

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.08 MB

english, 2013

26

Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕GaN field effect transistor

Kang, Youn-Seon, Fan, Qian, Xiao, Bo, Alivov, Ya. I., Xie, Jinqiao, Onojima, Norio, Cho, Sang-Jun, Moon, Yong-Tae, Lee, Hosun, Johnstone, D., Morkoç, Hadis, Park, Young-Soo

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 258 KB

english, 2006

27

Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition

Hussey, Lindsay, Mita, Seiji, Xie, Jinqiao, Guo, Wei, Akouala, Christer-Rajiv, Rajan, Joseph, Bryan, Isaac, Collazo, Ramón, Sitar, Zlatko

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.64 MB

english, 2012

28

On the origin of the 265 nm absorption band in AlN bulk crystals

Collazo, Ramón, Xie, Jinqiao, Gaddy, Benjamin E., Bryan, Zachary, Kirste, Ronny, Hoffmann, Marc, Dalmau, Rafael, Moody, Baxter, Kumagai, Yoshinao, Nagashima, Toru, Kubota, Yuki, Kinoshita, Toru, Kouk

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 644 KB

english, 2012

29

Kinase detection with gallium nitride based high electron mobility transistors

Makowski, Matthew S., Bryan, Isaac, Sitar, Zlatko, Arellano, Consuelo, Xie, Jinqiao, Collazo, Ramon, Ivanisevic, Albena

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.71 MB

english, 2013

30

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Gaddy, Benjamin E., Bryan, Zachary, Bryan, Isaac, Xie, Jinqiao, Dalmau, Rafael, Moody, Baxter, Kumagai, Yoshinao, Nagashima, Toru, Kubota, Yuki, Kinoshita, Toru, Koukitu, Akinori, Kirste, Ronny, Sitar

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 463 KB

english, 2014

31

[IEEE 2009 Chinese Conference on Pattern Recognition (CCPR) - Nanjing, China (2009.11.4-2009.11.6)] 2009 Chinese Conference on Pattern Recognition - Multi-Information Fusing Based Railroad Object Detection

Xie, Chengli, Wang, Jinqiao, Lu, Hanqing

Year:

2009

File:

PDF, 515 KB

2009

32

High-Energy Storage Performance of (Pb 0.87 Ba 0.1 La 0.02 )(Zr 0.68 Sn 0.24 Ti 0.08 )O 3 Antiferroelectric Ceramics Fabricated by the Hot-Press Sintering Method

Zhang, Guangzu, Zhu, Dingyang, Zhang, Xiaoshan, Zhang, Ling, Yi, Jinqiao, Xie, Bing, Zeng, Yike, Li, Qi, Wang, Qing, Jiang, Shenglin, Zhang, S.

Journal:

Journal of the American Ceramic Society

Year:

2015

Language:

english

File:

PDF, 1.92 MB

english, 2015

33

Comparative Study of Thin PZT Sol-gel Films Deposited on Pt and GaN Substrates

Chevtchenko, Serguei A., Agra, Francisco A., Xie, Jinqiao, Morkoç, Hadis

Journal:

MRS Proceedings

Year:

2007

Language:

english

File:

PDF, 1.06 MB

english, 2007

34

Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Kinoshita, Toru, Hironaka, Keiichiro, Obata, Toshiyuki, Nagashima, Toru, Dalmau, Rafael, Schlesser, Raoul, Moody, Baxter, Xie, Jinqiao, Inoue, Shin-ichiro, Kumagai, Yoshinao, Koukitu, Akinori, Sitar,

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 1.66 MB

english, 2012

35

Schottky I-V Characteristics of Au/Ni/GaN/SiNx nanonework/sapphire structures

Xie, Jinqiao, Fu, Yi, Morkoç, Hadis

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 101 KB

english, 2006

36

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Bryan, Zachary, Bryan, Isaac, Xie, Jinqiao, Mita, Seiji, Sitar, Zlatko, Collazo, Ramón

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 1.23 MB

english, 2015

37

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 2 February 2013)] Quantum Sensing and Nanophotonic Devices X - Fabrication and characterization of lateral polar GaN structures for second harmonic generation

Hoffmann, Marc P., Gerhold, Michael, Kirste, Ronny, Rice, Anthony, Akouala, Christer-Rajiv, Xie, Jinqiao Q., Mita, Seiji, Collazo, Ramon, Sitar, Zlatko, Razeghi, Manijeh

Year:

2013

Language:

english

File:

PDF, 647 KB

english, 2013

38

1.37 - 2.90 Micron Intersubband Transitions in GaN/AlN Superlattices

DeCuir, Eric Anthony, Fred, Emil, Manasreh, Omar, Xie, Jinqiao, Morkoc, Hadis, Baumann, Esther, Hofstetter, Daniel

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 149 KB

english, 2006

39

ECS Transactions [ECS 218th ECS Meeting - Las Vegas, NV (October 10 - October 15, 2010)] - Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

Dalmau, Rafael, Moody, Baxter, Schlesser, Raoul, Mita, Seiji, Xie, Jinqiao, Feneberg, Martin, Neuschl, Benjamin, Thonke, Klaus, Collazo, Ramón, Rice, Anthony, Tweedie, James, Sitar, Zlatko

Year:

2010

Language:

english

File:

PDF, 585 KB

english, 2010

40

Erratum: “Kinase detection with gallium nitride based high electron mobility transistors” [Appl. Phys. Lett. 103, 013701 (2013)]

Makowski, Matthew S., Bryan, Isaac, Sitar, Zlatko, Arellano, Consuelo, Xie, Jinqiao, Collazo, Ramon, Ivanisevic, Albena

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.84 MB

english, 2013

41

[ACM Press the First International Conference - Kunming, Yunnan, China (2009.11.23-2009.11.25)] Proceedings of the First International Conference on Internet Multimedia Computing and Service - ICIMCS '09 - Boosted forest for human detection

Xie, Chengli, Wang, JinQiao, Lu, Hanqing

Year:

2009

Language:

english

File:

PDF, 1.06 MB

english, 2009

42

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2006 - San Jose, CA (Saturday 21 January 2006)] Gallium Nitride Materials and Devices - Ferroelectric PZT/AlGaN/GaN field effect transistors

Kang, Youn-Seon, Xiao, Bo, Alivov, Ya. I., Fan, Qian, Xie, Jinqiao, Morko, Hadis, Litton, Cole W., Grote, James G., Morkoc, Hadis, Madhukar, Anupam

Year:

2006

Language:

english

File:

PDF, 255 KB

english, 2006

43

SPIE Proceedings [SPIE SPIE OPTO: Integrated Optoelectronic Devices - San Jose, CA (Saturday 24 January 2009)] Gallium Nitride Materials and Devices IV - Ferroelectric field effect transistor with a double-gate structure on AlGaN/GaN heterostructures

Xiao, Bo, Xie, Jinqiao, Avrutin, Vitaliy, Fan, Qian, Wu, Mo, Morkoç, Hadis, Morkoç, Hadis, Litton, Cole W., Chyi, Jen-Inn, Nanishi, Yasushi, Piprek, Joachim, Yoon, Euijoon

Year:

2009

Language:

english

File:

PDF, 212 KB

english, 2009

44

Epitaxial Growth of ZrO2 on GaN by MOMBE for High Dielectric Material Applications

Gu, Xing, Xie, Jinqiao, Chevtchenko, Serguei, Izyumskaya, Natalia, Avrutin, Vataliy, Morkoç, Hadis

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 331 KB

english, 2006

45

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2008 - San Jose, CA (Saturday 19 January 2008)] Zinc Oxide Materials and Devices III - ZnO hybrid microcavities grown by plasma assisted molecular beam epitaxy

Shimada, Ryoko, Teherani, Ferechteh H., Litton, Cole W., Xie, Jinqiao, Avrutin, Vitaliy, Özgür, Ümit, Morkoç, Hadis

Year:

2008

Language:

english

File:

PDF, 322 KB

english, 2008

46

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2007 - San Jose, CA (Saturday 20 January 2007)] Gallium Nitride Materials and Devices II - AlGaN/GaN MOS transistors using crystalline ZrO 2 as gate dielectric

Gu, Xing, Morkoc, Hadis, Litton, Cole W., Izyumskaya, Natalia, Avrutin, Vitaly, Xie, Jinqiao, Chevtchenko, Serguei, Xiao, Bo, Morkoç, Hadis

Year:

2007

Language:

english

File:

PDF, 321 KB

english, 2007

47

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2007 - San Jose, CA (Saturday 20 January 2007)] Gallium Nitride Materials and Devices II - High reflectivity ultraviolet distributed Bragg reflector based on AlGaN/AlGaN multilayer

Shimada, Ryoko, Morkoc, Hadis, Litton, Cole W., Xie, Jinqiao, Morkoç, Hadis

Year:

2007

Language:

english

File:

PDF, 351 KB

english, 2007

48

SPIE Proceedings [SPIE SPIE OPTO: Integrated Optoelectronic Devices - San Jose, CA (Saturday 24 January 2009)] Gallium Nitride Materials and Devices IV - Two dimensional electron gas in GaN heterojunction field effect transistors structures with AlN spacer

Fan, Qian, Morkoç, Hadis, Litton, Cole W., Leach, Jacob H., Xie, Jinqiao, Chyi, Jen-Inn, Nanishi, Yasushi, Ozgur, Umit, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Zhou, L., Smith, D. J.

Year:

2009

Language:

english

File:

PDF, 422 KB

english, 2009

49

The influence of temperature induced phase transition on the energy storage density of anti-ferroelectric ceramics

Yi, Jinqiao, Zhang, Ling, Xie, Bing, Jiang, Shenglin

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 1.25 MB

english, 2015

50

[OSA CLEO: Science and Innovations - Baltimore, Maryland (2011..-..)] CLEO:2011 - Laser Applications to Photonic Applications - 265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization

Collazo, Ramon, Mita, Seiji, Xie, Jinqiao, Rice, Anthony, Tweedie, James, Dalmau, Rafael, Moody, Baxter, Schlesser, Raoul, Kirste, Ronny, Hoffmann, Axel, Sitar, Zlatko

Year:

2011

Language:

english

File:

PDF, 494 KB

english, 2011